Project Description:
This project aims to propose a viable upscaled process for the production of thin-film aluminum oxide via atomic layer deposition (ALD). The technique for the formation of aluminum oxide from water and TMA precursors is the most established ALD process. It follows a self-limiting, layer-by-layer deposition mechanism through sequential half reactions. By repeating these cycles hundreds of times, thin, uniform aluminum oxide films can be grown with excellent step coverage, high aspect ratio conformity, and precise thickness control, making ALD an ideal technique for advanced microelectronics, nanotechnology, and protective coatings. Despite the advantages of ALD, it remains a relatively small-scale process and ongoing research aims to improve the scalability of ALD and enhance the throughput without sacrificing film quality. This project has evaluated current laboratory production and employed Aspen and COMSOL to model a newly conceived manufacturing process that is both technically robust and economically sustainable to adequately meet growing market demands.
